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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA152N085T
IXTP152N085T
V DSS
I D25
R DS(on)
= 85 V
= 152 A
≤ 7.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
85
85
V
V
V GSM
Transient
± 20
V
G
S
I D25
I LRMS
I DM
I AR
E AS
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
152
75
410
25
750
A
A
A
A
mJ
TO-220 (IXTP)
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 ?
3
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
360
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
M d
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
300 ° C
260 ° C
1.13 / 10 Nm/lb.in.
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Weight
TO-220
TO-263
3
2.5
g
g
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
Applications
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150 ° C
V GS = 10 V, I D = 25 A, Notes 1, 2
85
2.0
5.8
4.0
± 200
25
250
7.0
V
V
nA
μ A
μ A
m ?
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
? 2006 IXYS CORPORATION All rights reserved
DS99532 (11/06)
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相关代理商/技术参数
IXTA152N085T7 功能描述:MOSFET 152 Amps 85V 6.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA15N50L2 制造商:IXYS Corporation 功能描述:MOSFET N-CH 500V 15A T0-263
IXTA15P15T 功能描述:MOSFET TenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA160N04T2 功能描述:MOSFET 160Amps 40V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA160N075T 功能描述:MOSFET 160 Amps 75V 5.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA160N075T7 功能描述:MOSFET 160 Amps 75V 5.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA160N085T 功能描述:MOSFET 160 Amps 85V 0.006 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA160N10T 功能描述:MOSFET 160 Amps 100V 6.9 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube